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Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 67-72

Fast epitaxial growth of 4H-SiC and analysis of defect transfer

(4) Tsuchida, H a Ito, M a Kamata, I a Nagano, M a

a CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY (Japan)

Author keywords

Basal plane dislocation; Epitaxial growth; Extended defect; Topography

Indexed keywords

EPILAYERS; GROWTH RATE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SCREW DISLOCATIONS; SILICON CARBIDE; TOPOGRAPHY;

BASAL PLANE DISLOCATION (BPDS); BASAL PLANE DISLOCATIONS; EXTENDED DEFECT; FAST EPITAXIAL GROWTHS; HIGH GROWTH RATE; POLYTYPES; THREADING SCREW DISLOCATIONS; X-RAY TOPOGRAPHY;

EPITAXIAL GROWTH;

EID: 66149175855 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.615-617.67 Document Type: Conference Paper

Times cited : (24)

References (8)

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