High quality epitaxial growth on 4° off-axis 4H SiC with addition of HCI

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 103-106

  Zhang, Jie ^a   Mazzola, Janice ^a   Sunkari, Swapna ^a   Stewart, Gray ^a   Klein, Paul B ^b   Ward, Rachael M ^b   Glaser, Evan ^b   Lew, Kok Keong ^b   Gaskill, D Kurt ^b   Sankin, Igor ^a   Bondarenko, Vlad ^a   Null, David ^a   Sheridan, David ^a   Mazzola, Mike ^a  

^a SemiSouth Laboratories Inc   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Carrier lifetime; Deep level defects; Epitaxy; Hci; Morphology; SiC

Indexed keywords

CARRIER LIFETIME; CHLORINE COMPOUNDS; DEFECT DENSITY; ELECTRIC FIELDS; EPITAXIAL GROWTH; SEMICONDUCTOR DIODES; SILICON WAFERS; SURFACE DEFECTS; TEMPERATURE;

CHARACTERIZATION TECHNIQUES; CRYSTALLINE IMPERFECTION; DEEP-LEVEL DEFECTS; HCI; HIGH PURITY; HIGH QUALITY; HIGH-LOW; LOW DEFECT DENSITIES; LOWER DENSITY; OFF-AXIS;

SILICON CARBIDE;

EID: 63849273626     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.103     Document Type: Conference Paper

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