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Volumn 25, Issue 7, 2005, Pages 949-952

Research of the morphologies and structure of γ-LiAlO2 annealed in various atmospheres

Author keywords

Absorption spectrum; Anneal; Lithium aluminate; Optical materials; Surface morphology; Surface structure; Temperature gradient technique

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; CRYSTAL MICROSTRUCTURE; LITHIUM COMPOUNDS; MORPHOLOGY; PLATE METAL; PROTECTIVE ATMOSPHERES; SCANNING ELECTRON MICROSCOPY; SPECTROPHOTOMETERS; SURFACES; X RAY DIFFRACTION ANALYSIS;

EID: 23444437090     PISSN: 02532239     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (8)

References (10)
  • 1
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  • 2
    • 0036622132 scopus 로고    scopus 로고
    • 2 as a substrate of GaN by temperature gradient technique
    • Chinese source
    • 2 as a substrate of GaN by Temperature Gradient Technique[J]. Acta Optica Sinica, 2002, 22(6): 761-764 (in Chinese)
    • (2002) Acta Optica Sinica , vol.22 , Issue.6 , pp. 761-764
    • Yang, W.1    Gan, F.2    Deng, P.3
  • 3
    • 0031623208 scopus 로고    scopus 로고
    • 2 crystal used for GaN epitaxy
    • Chinese source
    • 2 crystal used for GaN epitaxy[J]. Acta Optica Sinica, 1998, 18(3): 499-502 (in Chinese)
    • (1998) Acta Optica Sinica , vol.18 , Issue.3 , pp. 499-502
    • Xu, K.1    Xu, J.2    Zhou, G.3
  • 5
    • 0034710677 scopus 로고    scopus 로고
    • Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
    • P. Waltereit, O. Brandt, A. Trampert et al.. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes[J]. Nature, 2000, 406: 865-867
    • (2000) Nature , vol.406 , pp. 865-867
    • Waltereit, P.1    Brandt, O.2    Trampert, A.3
  • 6
    • 79957932778 scopus 로고    scopus 로고
    • 1-x N multiple quantum wells on R- plane (101̄ 2) sapphire substrates
    • 1-x N multiple quantum wells on R- plane (101̄ 2) sapphire substrates[J]. Appl. phys. Lett., 2002, 80(23): 4369-4371
    • (2002) Appl. Phys. Lett. , vol.80 , Issue.23 , pp. 4369-4371
    • Ng, H.M.1
  • 7
    • 0035399211 scopus 로고    scopus 로고
    • 2 (100): Nitride semicondutors free of internal electrostatic fields
    • 2 (100): nitride semicondutors free of internal electrostatic fields[J]. J. Cryst. Growth, 2001, 227-228: 437-441
    • (2001) J. Cryst. Growth , vol.227-228 , pp. 437-441
    • Waltereit, P.1    Brandt, O.2    Ramsteiner, M.3
  • 8
    • 0037401897 scopus 로고    scopus 로고
    • Growth of large-sized Yb:YAG single crystals by temperature gradient technique
    • Guangjun Zhao, Jiliang Si, Xiaodong Xu et al.. Growth of large-sized Yb:YAG single crystals by temperature gradient technique[J]. J. Cryst. Growth, 2003, 252(6): 355-359
    • (2003) J. Cryst. Growth , vol.252 , Issue.6 , pp. 355-359
    • Zhao, G.1    Si, J.2    Xu, X.3
  • 9
    • 2942574384 scopus 로고    scopus 로고
    • 2 layer on (0001) sapphire fabricated by vapor transport equilibration
    • 2 layer on (0001) sapphire fabricated by vapor transport equilibration[J]. J. Cryst. Growth, 2004, 267(3-4): 564-568
    • (2004) J. Cryst. Growth , vol.267 , Issue.3-4 , pp. 564-568
    • Zhou, S.1    Xu, J.2    Li, S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.