Optical Anisotropic Properties of m-Plane GaN Film Grown by Metalorganic Chemical Vapor Deposition

Journal of Rare Earths

Volumn 25, Issue SUPPL. 2, 2007, Pages 356-359

  Jieying, Kong ^a   Rong, Zhang ^a   Yong, Zhang ^a   Chengxiang, Liu ^a   Zili, Xie ^a   Bin, Liu ^a   Shining, Zhu ^a   Naiben, Min ^a   Youdou, Zheng ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

anisotropy; electronic band structure; GaN; O472.3; polarization; split; TN304.23

Indexed keywords

ANISOTROPY; BAND STRUCTURE; FILM GROWTH; LATTICE MISMATCH; LIGHT ABSORPTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLARIZATION;

ELECTRONIC BAND STRUCTURE; ELECTRONIC BAND STRUCTURE (EBS); POLARIZED ABSORPTION;

GALLIUM NITRIDE;

EID: 36148991845     PISSN: 10020721     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1002-0721(07)60504-3     Document Type: Article

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