Initial growth behavior and resulting microstructural properties of heteroepitaxial ZnO thin films on sapphire (0001) substrates

Applied Physics Letters

Volumn 90, Issue 1, 2007, Pages

  Liu, C ^a   Chang, S H ^a   Noh, T W ^a   Abouzaid, M ^b   Ruterana, P ^b   Lee, H H ^c   Kim, D W ^d   Chung, J S ^e  

^a Seoul National University   (South Korea)

^b CNRS   (France)

^c POSTECH   (South Korea)

^d Hanyang University   (South Korea)

^e Soongsil University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

MICROSTRUCTURE; PARAMETER ESTIMATION; PULSED LASER DEPOSITION; SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

GROWTH PARAMETERS; HETEROEPITAXIAL ZNO THIN FILMS; INITIAL GROWTH BEHAVIOR; MICROSTRUCTURAL PROPERTIES;

THIN FILMS;

EID: 33846035361     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2428489     Document Type: Article

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