Epitaxial ZnO films grown on sapphire (001) by ultraviolet-assisted pulsed laser deposition

Journal of the Electrochemical Society

Volumn 147, Issue 3, 2000, Pages 1077-1079

  Craciun, V ^a   Singh, R K ^a   Perriere, J ^b   Spear, J ^c   Craciun, D ^d  

^a University of Florida   (United States)

^b UNIVERSITÉ PARIS DESCARTES   (France)

^c Malvern Instruments Inc   (United States)

^d NATIONAL INSTITUTE FOR LASER   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DEPOSITION; EPITAXIAL GROWTH; HIGH TEMPERATURE OPERATIONS; PULSED LASER APPLICATIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; SILICON; SUBSTRATES; TEXTURES; ULTRAVIOLET RADIATION; ZIRCONIA;

FULL WIDTH AT HALF MAXIMUM; ULTRAVIOLET ASSISTED PULSED LASER DEPOSITION; X RAY POLE FIGURE MEASUREMENT;

THIN FILMS;

EID: 0033878423     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393316     Document Type: Article

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