메뉴 건너뛰기




Volumn 311, Issue 11, 2009, Pages 3147-3151

ScAlN nanowires: A cathodoluminescence study

Author keywords

A1. Nanostructures; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds

Indexed keywords

A1. NANOSTRUCTURES; A3. HYDRIDE VAPOR PHASE EPITAXY; ALN; AVERAGE LENGTH; B1. NITRIDES; B2. SEMICONDUCTING ALUMINUM COMPOUNDS; ENERGY DISPERSIVE ANALYSIS OF X-RAYS; HIGH-RESOLUTION TRANSMISSION ELECTRON SPECTROSCOPIES; HYDRIDE VAPOR PHASE EPITAXY; MATRIX; OPTOELECTRONIC APPLICATIONS; SEM; SHARP EMISSION; WURTZITE;

EID: 65849152537     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.03.023     Document Type: Article
Times cited : (15)

References (32)
  • 25
    • 0003685207 scopus 로고
    • Properties of Group III Nitrides
    • J.H. Edgar Ed, INSPEC, London
    • L.E. McNeil, in: J.H. Edgar (Ed.), Properties of Group III Nitrides: EMIS Data Review Series no. 11, INSPEC, London, 1994, pp. 249-251.
    • (1994) EMIS Data Review Series , vol.11 , pp. 249-251
    • McNeil, L.E.1
  • 30
    • 65849408883 scopus 로고    scopus 로고
    • K. Pressel, P. Thurian, in: J.H. Edgar, S. (T) Strite, I. Akasaki, H. Amano, C. Wetzel (Eds.), Properties, Processing, and Applications of Gallium Nitride and Related Semiconductors: EMIS Data Review Series no. 23, INSPEC, London, 1999, pp. 322-325.
    • K. Pressel, P. Thurian, in: J.H. Edgar, S. (T) Strite, I. Akasaki, H. Amano, C. Wetzel (Eds.), Properties, Processing, and Applications of Gallium Nitride and Related Semiconductors: EMIS Data Review Series no. 23, INSPEC, London, 1999, pp. 322-325.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.