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Volumn 5, Issue 6, 2008, Pages 1740-1742
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Growth and magnetization study of transition metal doped GaN nanostructures
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Author keywords
[No Author keywords available]
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Indexed keywords
DEVICE EFFICIENCY;
GAN NANOSTRUCTURES;
HYSTERESIS BEHAVIOUR;
HYSTERESIS CURVE;
LATERAL DIMENSION;
MOCVD GROWTH;
OPTICALLY ACTIVE;
SPINTRONIC APPLICATIONS;
SUPERPARAMAGNETICS;
CHEMICAL VAPOR DEPOSITION;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
HYSTERESIS;
MANGANESE;
MANGANESE COMPOUNDS;
SEMICONDUCTOR GROWTH;
SUPERPARAMAGNETISM;
NANOSTRUCTURES;
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EID: 65849475174
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.200778615 Document Type: Conference Paper |
Times cited : (3)
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References (11)
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