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Volumn 310, Issue 6, 2008, Pages 1075-1080

HVPE of scandium nitride on 6H-SiC(0 0 0 1)

Author keywords

A1. Impurities; A1. X ray diffraction; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2 Semiconducting III V materials

Indexed keywords

DEPOSITION; HYDRIDES; IMPURITIES; SCANDIUM COMPOUNDS; THIN FILMS; VAPOR PHASE EPITAXY; X RAY DIFFRACTION;

EID: 39649110119     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.12.053     Document Type: Article
Times cited : (31)

References (19)
  • 9
    • 33646386161 scopus 로고    scopus 로고
    • M.A. Moram, T.B. Joyce, P.R. Chalker, Z.H. Barber, C.J. Humphreys, GaN, AlN, InN and related materials, in: Material Research Society Symposium Proceeedings, vol. 892 2006, p. 723.
    • M.A. Moram, T.B. Joyce, P.R. Chalker, Z.H. Barber, C.J. Humphreys, GaN, AlN, InN and related materials, in: Material Research Society Symposium Proceeedings, vol. 892 2006, p. 723.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.