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Volumn 310, Issue 6, 2008, Pages 1075-1080
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HVPE of scandium nitride on 6H-SiC(0 0 0 1)
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Author keywords
A1. Impurities; A1. X ray diffraction; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2 Semiconducting III V materials
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Indexed keywords
DEPOSITION;
HYDRIDES;
IMPURITIES;
SCANDIUM COMPOUNDS;
THIN FILMS;
VAPOR PHASE EPITAXY;
X RAY DIFFRACTION;
HYDRIDE VAPOR PHASE EPITAXY;
SCANDIUM SOURCE TEMPERATURE;
SEMICONDUCTING III-V MATERIALS;
SILICON CARBIDE;
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EID: 39649110119
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2007.12.053 Document Type: Article |
Times cited : (31)
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References (19)
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