AlN on sapphire and on SiC: CL and Raman study

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 441-443

  Kornitzer, K ^a   Limmer, W ^a   Thonke, K ^a   Sauer, R ^a   Ebling, D G ^b   Steinke, L ^b   Benz, K W ^b  

^a UNIVERSITY OF ULM   (Germany)

^b UNIVERSITY OF FREIBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; CRYSTAL DEFECTS; PHONONS; RAMAN SCATTERING; SAPPHIRE; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE;

BAND-GAP ENERGIES; PLASMA ENHANCED MOLECULAR BEAM EPITAXY;

MOLECULAR BEAM EPITAXY;

EID: 0032630697     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01371-2     Document Type: Article

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