Fabrication of free-standing AlN crystals by controlled microrod growth

Journal of Crystal Growth

Volumn 310, Issue 5, 2008, Pages 935-939

  Yazdi, G R ^a   Vasiliauskas, R ^a   Syvajarvi M ^a   Yakimova, R ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

A1. X ray topography; A2. Growth from vapor; A2. Single crystal growth; B2. Semiconducting III V materials

Indexed keywords

ALUMINUM COMPOUNDS; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTOR MATERIALS; SILICON WAFERS; SINGLE CRYSTALS; TOPOGRAPHY;

ALUMINUM NITRIDE; MICROROD GROWTH; PHYSICAL VAPOR TRANSPORT; X-RAY TOPOGRAPHY;

CRYSTAL GROWTH;

EID: 39249085769     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.124     Document Type: Article

References (10)

1. Ambacher O. J. Phys. D 31 (1998) 2653
2. Lu H.Q., Bhat I.B., Lee B.C., Slack G.A., and Schowalter L.J. Mater. Res. Soc. Symp. Proc. 482 (1997) 277
3. Liu L., and Edgar J.H. Mater. Sci. Eng. R37 (2002) 61
4. Singh N.B., Berghmans A., Zhang H., Wait T., Chris Clarke R., Zingaro J., and Golombeck J.C. J. Crystal Growth 250 (2003) 107
5. Noveski V., Schlesser R., Mahajan S., Beaudoin S., and Sitar Z. J. Crystal Growth 264 (2004) 369
6. L.J. Schowalter, G.A. Slack, C. Rojo, U.S. Patent No. 6, 770, 2004, p. 135.
7. Yazdi G.R., Syväjärvi M., and Yakimova R. Phys. Scr. T126 (2006) 127
8. Lu P., Edgar J.H., Lee R.G., and Chaudhuri J. J. Crystal Growth 300 (2007) 336
9. Yazdi G.R., Syväjärvi M., and Yakimova R. Appl. Phys. Lett. 90 (2007) 123103
10. JCPDS-International Center for Diffraction Data, 1998.