HC1 selective etching of Si1-xGex versus Si for silicon on nothing and multi gate devices

ECS Transactions

Volumn 16, Issue 10, 2009, Pages 427-438

  Destefanis, V ^a   Hartmann, J M ^b   Hue F ^c   Bensahel, D ^a  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; GERMANIUM COMPOUNDS; MULTILAYERS; SILICON; SURFACE ROUGHNESS; TEMPERATURE;

IN-PLANE ANISOTROPY; LAYER THICKNESS; LOW TEMPERATURES; MULTIGATE DEVICES; SELECTIVE ETCH; SELECTIVE ETCHING; SILICON ON NOTHING; VIRTUAL SUBSTRATES;

SI-GE ALLOYS;

EID: 63149185257     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2986800     Document Type: Conference Paper

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