Comparison between three Si1-xGex versus Si selective etching processes

ECS Transactions

Volumn 16, Issue 10, 2009, Pages 439-449

  Salvetat, T ^a   Destefanis, V ^b   Borel, S ^a   Hartmann, J M ^a   Kermarrec, O ^b   Campidelli, Y ^b  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; GERMANIUM COMPOUNDS; SILICON;

CF4 PLASMAS; GERMANIUM CONCENTRATION; HIGH TEMPERATURE AND PRESSURE; LOW PRESSURES; SACRIFICIAL MATERIAL; SELECTIVE ETCHING; SIGE LAYERS; TEST STRUCTURE;

SI-GE ALLOYS;

EID: 63149174775     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2986801     Document Type: Conference Paper

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