Uniform growth of GaN on AlN templated (111)Si substrate by HVPE

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2125-2128

  Honda, Y ^a   Okano, M ^a   Yamaguchi, M ^a   Sawaki, N ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; DEGRADATION; EPITAXIAL GROWTH; MELTING; SILICON; SURFACE CHEMISTRY; TEMPERATURE DISTRIBUTION; VAPOR PHASE EPITAXY;

GROWTH TEMPERATURE; HYDRIDE VAPOR PHASE EPITAXY(HVPE); SILICON SUBSTRATE;

GALLIUM NITRIDE;

EID: 27344451701     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461575     Document Type: Conference Paper

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