HVPE growth of a thick GaN layer on a GaN templated (111) Si substrate

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2506-2510

  Nishimura, Y ^a   Honda, Y ^a   Yamaguchi, M ^a   Sawaki, N ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FLAT SURFACES; HIGH GROWTH RATE; LOW GROWTH RATE; PHOTOLUMINESCENCE SPECTRUM; SI SUBSTRATES; SUBSTRATE SURFACE; TWO-STEP GROWTH METHODS; VAPOUR-PHASE;

GROWTH RATE; PHOTOLUMINESCENCE; SILICON;

GALLIUM NITRIDE;

EID: 54349128791     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303512     Document Type: Conference Paper

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