High-power GaInAs/(Al)GaAs quantum dot lasers with optimized waveguide design for high brightness applications

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 2002, Pages 147-148

  Deubert, Stefan ^a   Klopf, F ^a   Reithmaier, J P ^a   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVE EMISSION; GRADIENT INDEX OPTICS; HETEROJUNCTIONS; METAL CLADDING; OPTICAL WAVEGUIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

QUANTUM DOT LASERS (QDL);

SEMICONDUCTOR LASERS;

EID: 0036448449     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)

1. F. Klopf et al., "Correlation between the Gain Profile and the Temperature-Induced Wavelength-Shift of Quantum Dot Lasers", appears in Appl. Phys. Lett. 2002.