Low-temperature vapour-liquid-solid (VLS) growth of vertically aligned silicon oxide nanowires using concurrent ion bombardment

Nanotechnology

Volumn 20, Issue 11, 2009, Pages

  Bettge, Martin ^a   MacLaren, Scott ^a   Burdin, Steve ^a   Wen, Jian Guo ^a   Abraham, Daniel ^b   Petrov, Ivan ^a   Sammann, Ernie ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL FACTORS; DC-MAGNETRON SPUTTERING; GASEOUS PRECURSORS; LOW TEMPERATURES; LOW-SUBSTRATE TEMPERATURES; MOLTEN DROPLETS; NANOSTRUCTURE ARRAYS; NANOWIRE GROWTHS; ORDERED ARRAYS; OXIDE PRECIPITATES; PROCESSING TEMPERATURES; SEED LAYERS; SELF-ORGANIZED; SILICON OXIDE NANOWIRES; THIN SILICON FILMS; VERTICALLY ALIGNED; VLS GROWTHS; WATER VAPOURS;

ARGON; DROP FORMATION; ELECTRIC WIRE; FILM GROWTH; HYDROGEN; INDIUM; ION BOMBARDMENT; IONS; LIQUIDS; NANOWIRES; OXYGEN; PROCESSING; SILICA; SILICON COMPOUNDS; SYNTHESIS (CHEMICAL); WATER VAPOR;

SILICON OXIDES;

ARGON; HYDROGEN; INDIUM; NANOFILM; NANOMATERIAL; NANOWIRE; SILICON; SILICON DIOXIDE;

ARTICLE; LIQUID; LOW TEMPERATURE; PARTICLE SIZE; PRECIPITATION; PRIORITY JOURNAL; SOLID; SYNTHESIS; WATER VAPOR;

EID: 65549151841     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/11/115607     Document Type: Article

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