Trapped charge dynamics in a sol-gel based TiO2 high- k gate dielectric silicon metal-oxide-semiconductor field effect transistor

Journal of Physics Condensed Matter

Volumn 21, Issue 21, 2009, Pages

  Khan, M Ziaur Rahman ^a   Hasko, D G ^a   Saifullah, M S M ^b   Welland, M E ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS CONDITIONS; CENTRE FREQUENCIES; CLASSICAL INFORMATION PROCESSING; CONTINUOUS WAVES; FREQUENCY DEPENDENT CURRENTS; HIGH - K DIELECTRICS; HIGH-K GATE DIELECTRICS; HIGH-Q RESONANCES; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MICROWAVE RADIATIONS; PULSE SIGNALS; PULSE TIME; TIME-DEPENDENT CHARACTERISTICS; TRAPPED CHARGES;

DIELECTRIC DEVICES; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); GELATION; GELS; MICROWAVES; MOSFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SOL-GEL PROCESS; SOL-GELS; SOLS;

RESONANCE;

EID: 65549147381     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/21/215902     Document Type: Article

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