Charge trapping properties in Ti O2 HfSiOSi O2 gate stacks probed by scanning capacitance microscopy

Applied Physics Letters

Volumn 92, Issue 1, 2008, Pages

  Naitou, Y ^a   Arimura, H ^a   Kitano, N ^a   Horie, S ^a   Minami, T ^b   Kosuda, M ^b   Ogiso, H ^c   Hosoi, T ^a   Shimura, T ^a   Watanabe, H ^a  

^a OSAKA UNIVERSITY   (Japan)

^b Canon ANELVA Technix Corporation   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS CURRENTS; DIELECTRIC MATERIALS; ELECTRON TRAPS; HAFNIUM ALLOYS; SCANNING ELECTRON MICROSCOPY; SILICA; TITANIUM OXIDES;

GATE STACKS; INHOMOGENEOUS; SCANNING CAPACITANCE MICROSCOPY;

CHARGE TRAPPING;

EID: 38049020397     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2828863     Document Type: Article

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