Single-electron-resolution electrometer based on field-effect transistor

Japanese Journal of Applied Physics

Volumn 47, Issue 11, 2008, Pages 8305-8310

  Nishiguchi, Katsuhiko ^a   Koechlin, Charlie ^a   Ono, Yukinori ^a   Fujiwara, Akira ^a   Inokawa, Hiroshi ^a,b   Yamaguchi, Hiroshi ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Electrometer; High charge sensitivity; Si field effect transistor; Single electron

Indexed keywords

ELECTRIC CURRENTS; ELECTROMETERS; ELECTRONS; SEMICONDUCTING SILICON COMPOUNDS; TRANSISTORS;

DEVICE OPTIMIZATION; ELECTROMETER; HIGH CHARGE SENSITIVITY; OPERATION CONDITIONS; ROOM-TEMPERATURE (RT); SI FIELD-EFFECT TRANSISTOR; SILICON ON INSULATOR (SOI); SINGLE ELECTRON;

FIELD EFFECT TRANSISTORS;

EID: 58749104765     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.8305     Document Type: Article

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