Room-temperature-operating data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor technology

Applied Physics Letters

Volumn 88, Issue 18, 2006, Pages

  Nishiguchi, Katsuhiko ^a   Fujiwara, Akira ^a   Ono, Yukinori ^a   Inokawa, Hiroshi ^a   Takahashi, Yasuo ^a,b  

^a Bio Medical Informatics Research Center   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; DATA PROCESSING; DIGITAL TO ANALOG CONVERSION; ELECTROMETERS; ELECTRONS; SHRINKAGE; SILICON ON INSULATOR TECHNOLOGY;

ELECTRIC-FIELD-ASSISTED SHRINKAGE; HIGH-CHARGE-SENSITIVITY ELECTROMETER; SILICON-ON-INSULATOR SUBSTRATE; SINGLE-ELECTRON TRANSFER;

MOSFET DEVICES;

EID: 33646521558     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2200475     Document Type: Article

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