Latent noise in Schottky barrier MOSFETs

Journal of Statistical Mechanics: Theory and Experiment

Volumn 2009, Issue 1, 2009, Pages

  Yeh, Sheng Pin ^a   Shih, Chun Hsing ^b   Gong, Jeng ^a   Lien, Chenhsin ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b YUAN ZE UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 65449178829     PISSN: 17425468     EISSN: 17425468     Source Type: Journal    
DOI: 10.1088/1742-5468/2009/01/P01036     Document Type: Article

References (24)

1. ITRS 2003 International Technology Roadmap for Semiconductors
2. Zhang Z, Qiu Z, Hellstrom E P, Malm G, Olsson J, Lu J, Ostling M and Zhang L S 2008 SB-MOSFETs in UTB-SOI featuring PtSi source/drain with dopant segregation IEEE Electron Device Lett. 29 125
3. Larson M J and Snyder P J 2006 Overview and status of metal S/D Schottky barrier MOSFET technology IEEE Trans. Electron Devices 53 1048
4. t = 280 GHz IEEE Electron Device Lett. 25 220
5. Guo J and Lundstrom S M 2002 A computational study of thin-body, double gate, Schottky barrier MOSFETs IEEE Trans. Electron Devices 49 1897
6. Deen J M and Marinov O 2005 Noise in advanced electronic device and circuits ICNF: Int. Conf. Noise and Fluctuations p3
7. Claeys C and Simoen E 2000 Impact of advanced processing modules on the low-frequency noise performance of deep-submicron CMOS technologies Microelectron. Reliab. 40 1815
8. Celik Z and Hsiang Y T 1985 Study of 1/f noise in N-MOSFET's: linear region IEEE Trans. Electron Devices 32 2797
9. Asano T, Maeda Y, Nakagawa G and Arima Y 2002 Physical random-number generator using Schottky source/drain SOI MOSFET Japan. J. Appl. Phys. 41 2306
10. Haartman V M, Hallstedt J, Seger J, Malm G B, Hellstrom E P and Ostling M 2005 Low frequency noise in SiGe channel pMOSFETs on ultra-thin body SOI with Ni-silicided source/drain ICNF: Int. Conf. Noise and Fluctuations p307
11. Synopsys MEDICI 2006 User's Manual
12. Jang M, Kim Y, Jeon M, Choi C, Park B and Lee S 2006 Ambipolar carrier injection characteristics of erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistors Japan. J. Appl. Phys. 45 730
13. Knoch J and Appenzeller J 2002 Impact of the channel thickness on the performance of Schottky barrier metal-oxide-semiconductor field-effect transistors Appl. Phys. Lett. 81 3082
14. Uchida K, Matsuzawa K, Koga J, Takagi S and Toriumi A 2000 Enhancement of hot-electron generation rate in Schottky source metal-oxide-semiconductor field-effect transistors Appl. Phys. Lett. 76 3992
15. Larrieu G, Dubois E, Valentin R, Breil N, Danneville F, Dambrine G, Raskin P J and Pesant C J 2007 Low temperature implementation of dopant-segregated band-edge metallic S/D junction in thin-body SOI p-MOSFETs IEDM Tech. Dig. p 147
16. Knoch J, Zhang M, Zhao T Q, Lenk St Mantl S and Appenzeller J 2005 Effective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation Appl. Phys. Lett. 87 263505
17. Iwai H, Ohguro T and Ohmi I S 2002 NiSi silicide technology for scaled CMOS Microelectron. Eng. 60 157
18. Jang M, Kim Y, Jun M, Choi C, Baek I, Lee S and Park B 2007 Analysis of interface trap states at Schottky diode by using equivalent circuit modeling J. Vac. Sci. Technol. B 25 82
19. Larrieu G and Dubois E 2005 Integration of PtSi based Schottky barrier pMOSFETs with a midgap tungsten gate IEEE Trans. Electron Devices 52 2720
20. Lavoie C, d'Heurle F M, Detavernier C and Cabral C Jr 2003 Towards implementation of a nickel silicide process for CMOS technologies Microelectron. Eng. 70 144
21. 2 interface trap annealing J. Appl. Phys. 63 5776
22. Papatzika S, Hastas A N, Angelis T C, Dimitriadis A C, Kamarinor G and Lee I J 2002 Investigation of noise sources in platinum silicide Schottky barrier diodes Appl. Phys. Lett. 80 1468
23. Guttler H H and Werner H J 1990 Influence of barrier inhomogeneities on noise at Schottky contacts Appl. Phys. Lett. 56 1113
24. Dabrowski W and Korbel K 1988 Excess generation-recombination noise in reverse biased Schottky barrier diodes Solid-State Electron. 31 1657