Low-temperature growth of polycrystalline GaN films using modified activated reactive evaporation

Journal of Crystal Growth

Volumn 311, Issue 8, 2009, Pages 2275-2280

  Biju, Kuyyadi P ^a   Subrahmanyam, A ^a   Jain, Mahaveer K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

A3. Modified activated reactive evaporation; B2. GaN

Indexed keywords

A3. MODIFIED ACTIVATED REACTIVE EVAPORATION; B2. GAN; CRYSTALLINE QUALITIES; EXCESS NITROGENS; EXCITED SPECIES; FILM RESISTIVITIES; GAN FILMS; GAN GROWTHS; GLASS SUBSTRATES; GROUP-III NITRIDES; HIGH DEPOSITION RATES; LOW ENERGIES; LOW TEMPERATURES; LOW-TEMPERATURE GROWTHS; OXYGEN CONCENTRATIONS; OXYGEN IMPURITIES; POLYCRYSTALLINE FILMS; POLYCRYSTALLINE GAN; PREFERRED ORIENTATIONS; RELATIVE CONCENTRATIONS; RF-POWER; WURTZITE STRUCTURES;

ATOMIC SPECTROSCOPY; CRYSTALLINE MATERIALS; EMISSION SPECTROSCOPY; EVAPORATION; FILM GROWTH; FILM PREPARATION; GALLIUM NITRIDE; ION BOMBARDMENT; IONS; MOLECULAR SPECTROSCOPY; NITROGEN; OPTICAL EMISSION SPECTROSCOPY; OXYGEN; POINT DEFECTS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; STOICHIOMETRY; SUBSTRATES; VAPORS; ZINC SULFIDE;

GALLIUM ALLOYS;

EID: 65249183925     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.127     Document Type: Article

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