Optical emission spectroscopy as the monitoring tool in ECR-MBE growth of GaN

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 317-320

  Chiba, Yasuo ^a   Shimizu, Yuui ^a   Tominari, Tatsuya ^a   Hokuto, Shingo ^a   Nanishi, Yasushi ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

Crystal structure; ECR MBE; GaN; OES; Substrate bias voltage; V III ratio

Indexed keywords

CRYSTAL STRUCTURE; DESORPTION; ELECTRON CYCLOTRON RESONANCE; EMISSION SPECTROSCOPY; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; NITRIDES; SEMICONDUCTOR GROWTH; SUBSTRATES;

SUBSTRATE BIAS VOLTAGE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032089857     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00277-2     Document Type: Article

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