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Volumn 237-239, Issue 1-4 II, 2002, Pages 1079-1083
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Heteroepitaxial growth of gallium nitride on (1 1 1)GaAs substrates by radio frequency magnetron sputtering
a
a
SAGA UNIVERSITY
(Japan)
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Author keywords
A1. Crystal structure; A1. High resolution X ray diffraction; A1. Reflection high energy electron diffraction; B1. Nitrides; B2. Semiconducting gallium compounds
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Indexed keywords
AMORPHOUS FILMS;
CRYSTAL STRUCTURE;
FILM GROWTH;
MAGNETRON SPUTTERING;
NITROGEN;
PLASMAS;
PRESSURE EFFECTS;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SAPPHIRE;
SEMICONDUCTING GALLIUM ARSENIDE;
SPUTTER DEPOSITION;
SUBSTRATES;
SURFACE ROUGHNESS;
THERMAL EFFECTS;
VAPOR PHASE EPITAXY;
HETEROEPITAXIAL GROWTH;
GALLIUM NITRIDE;
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EID: 0036531593
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)02140-6 Document Type: Article |
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Times cited : (24)
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References (17)
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