Low Dynamic On-Resistance Kilovolt-Range AlGaN/GaN HFETs

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2006, Pages 109-110

  Tipirneni, N ^a   Koudymov, A ^a   Adivarahan, V ^a   Yang, J ^a   Simin, G ^a   Khan, M Asif ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 65249136418     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. N.-Q. Zhang, S.Keller, G.Parish, S.Heikman, S.P.Denbaars, and U.K.Mishra, "High breakdown GaN HEMT with overlapping gate structure," IEEE Electron Device Lett., V. 21, pp.421-423, Sept. 2000.
2. B Tradeoff Characteristics, IEEE Electron Device Lett. V. 52, 106-111 (2005)
3. N. Tipirneni, A. Koudymov, V. Adivarahan, J. Yang, G Simin, and M. Asif Khan, "1.6 kV AlGaN/GaN HFETs", unpublished.