Initial growth layers and critical thickness of InAs heteroepitaxy on GaAs substrates

Journal of Crystal Growth

Volumn 160, Issue 1-2, 1996, Pages 27-35

  Sasaki, Akio ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; HETEROJUNCTIONS; INTERFACES (MATERIALS); LUMINESCENCE; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; THREE DIMENSIONAL; TRANSMISSION ELECTRON MICROSCOPY;

CRITICAL THICKNESS; HETEROEPITAXY; HETEROINTERFACE; INITIAL GROWTH LAYERS; MONO-MOLECULAR LAYER; PHOTOCURRENT SPECTROSCOPY; STRAIN ENERGY; STRANSKI-KRASTANOV; VALENCE FORCE FIELD METHOD; X RAY ROCKING CURVE;

SEMICONDUCTOR GROWTH;

EID: 0030105142     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00472-6     Document Type: Article

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