Fabrication and characterization of three-dimensional InGaAs/GaAs nanosprings

Nano Letters

Volumn 6, Issue 4, 2006, Pages 725-729

  Bell, Dominik J ^a   Dong, Lixin ^a   Nelson, Bradley J ^a   Golling, Matthias ^a   Zhang, Li ^b   Grützmacher, Detlev ^b  

^a ETH ZURICH   (Switzerland)

^b PAUL SCHERRER INSTITUTE   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SENSORS; THREE DIMENSIONAL;

ELECTROMECHANICAL SENSORS; NANOSPRINGS; WET ETCH;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

GALLIUM; GALLIUM ARSENIDE; INDIUM; INDIUM ARSENIDE; NANOMATERIAL; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; CONFORMATION; CRYSTALLIZATION; ELASTICITY; EQUIPMENT; EQUIPMENT DESIGN; EVALUATION; INSTRUMENTATION; MATERIALS TESTING; MECHANICAL STRESS; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; ULTRASTRUCTURE; VALIDATION STUDY;

ARSENICALS; COMPUTER SIMULATION; COMPUTER-AIDED DESIGN; CRYSTALLIZATION; ELASTICITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; INDIUM; MATERIALS TESTING; MODELS, CHEMICAL; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; STRESS, MECHANICAL;

EID: 33646435294     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl0525148     Document Type: Article

References (26)

1. Motojima, S.; Kawaguchi, M.; Nozaki, K.; Iwanaga, H. Appl. Phys. Lett. 1990, 56, 321-323.
2. Zhang, X. B.; Zhang, X. F.; Bernaerts, D.; Vantendeloo, G. T.; Amelinckx, S.; Vanlanduyt, J.; Ivanov, V.; Nagy, J. B.; Lambin, P.; Lucas, A. A. Europhys. Lett. 1994, 27, 141-146.
3. Gao, P. M.; Ding, Y.; Mai, W. J.; Hughes, W. L.; Lao, C. S.; Wang, Z. L. Science 2005, 309, 1700-1704.
4. Kong, X. Y.; Wang, Z. L. Nano Lett. 2003, 3, 1625-1631.
5. Chen, X. Q.; Zhang, S. L.; Dikin, D. A.; Ding, W. Q.; Ruoff, R. S.; Pan, L. J.; Nakayama, Y. Nano Lett. 2003, 3, 1299-1304.
6. Kaneto, K.; Tsuruta, M.; Motojima, S. Synth. Met. 1999, 103, 2578-2579.
7. Prinz, V. Y.; Seleznev, V. A.; Gutakovsky, A. K.; Chekhovsky, A. V.; Preobrazhenskii, V. V.; Putyato, M. A.; Gavrilova, T. A. Physica E 2000, 6, 828-831.
8. Prinz, A. V.; Prinz, V. Y.; Seleznev, V. A. Microelectron. Eng. 2003, 67-8, 782-788.
9. Schmidt, O. G.; Deneke, C.; Schmarje, N.; Müller, C.; Jin-Phillipp, N. Y. Mater. Sci. Eng., C 2002, 19, 393-396.
10. Prinz, V. Y.; Chekhovsky, A. V.; Preobrazhenskii, V. V.; Semyagin, B. R.; Gutakovsky, A. K. Nanotechnology 2002, 13, 231-233.
11. Vorobèv, A. B.; Prinz, V. Y. Semicond. Sci. Technol. 2002, 17, 614-616.
12. Bell, D. J.; Sun, Y.; Zhang, L.; Dong, L. X.; Nelson, B. J.; Grützmacher, D. Sens. Actuators, A, in press, 2006.
13. Hsu, Y. W.; Lu, S. S.; Chang, P. Z. J. Appl. Phys. 1999, 85, 333-340.
14. Hjort, K.; Soderkvist, J.; Schweitz, J. A. J. Micromech. Microeng. 1994, 4, 1-13.
15. Lin, G.; Pister, K. S. J.; Roos, K. P. J. Microelectromech. Syst. 2000, 9, 9-17.
16. Pruitt, B. L.; Park, W. T.; Kenny, T. W. J. Microelectromech. Syst. 2004, 13, 220-229.
17. Kim, Y. S.; Lee, C. S.; Jin, W. H.; Jang, S.; Nam, H. J.; Bu, J. U. Sens. Mater. 2005, 17, 57-63.
18. Poggi, M. A.; Boyles, J. S.; Bottomley, L. A. Nano Lett. 2004, 4, 1009-1016.
19. Fukuda, T.; Arai, F.; Dong, L. X. Proc. IEEE 2003, 91, 1803-1818.
20. Sasaki, A. J. Cryst. Growth 1996, 160, 27-35.
21. Tanner, B. K.; Parbrook, P. J.; Whitehouse, C. R.; Keir, A. M.; Johnson, A. D.; Jones, J.; Wallis, D.; Smith, L. M.; Lunn, B.; Hogg, J. H. C. Appl. Phys. Lett. 2000, 77, 2156-2158.
22. Torkhov, N. A. Semiconductors 2003, 37, 1177-1184.
23. Sader, J. E.; Chon, J. W. M.; Mulvaney, P. Rev. Sci. Instrum. 1999, 70, 3967-3969.
24. Clifford, C. A.; Seah, M. P. Nanotechnology 2005, 16, 1666-1680.
25. Nakajima, K. Jpn. J. Appl. Phys., Part 1 1999, 38, 1875-1883.
26. Cui, Y.; Wei, Q. Q.; Park, H. K.; Lieber, C. M. Science 2001, 293, 1289-1292.