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Volumn 111, Issue 49, 2007, Pages 12257-12259

Self-directed growth of contiguous perpendicular molecular lines on H-Si(100) surfaces

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; SCANNING TUNNELING MICROSCOPY; SELF ASSEMBLY; SILICON; SURFACE STRUCTURE;

EID: 38049181498     PISSN: 10895639     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp074389p     Document Type: Article
Times cited : (25)

References (18)
  • 11
    • 0000010085 scopus 로고
    • Boland, J. J. Adv. Phys. 1993, 42 (2), 129-171.
    • (1993) Adv. Phys , vol.42 , Issue.2 , pp. 129-171
    • Boland, J.J.1
  • 13
    • 38049177297 scopus 로고    scopus 로고
    • The calculation method employed is the same as that described in ref 12
    • The calculation method employed is the same as that described in ref 12.
  • 14
    • 38049132232 scopus 로고    scopus 로고
    • The styrene growth on 3 × 1 in ref 7 showed wider spacing, because the multiple small doses used gave sufficient time for a DB to hop from the monomer to the next dimer. This does not occur for a single large dose, where growth occurs on both the dimer and the monomer.
    • The styrene growth on 3 × 1 in ref 7 showed wider spacing, because the multiple small doses used gave sufficient time for a DB to hop from the monomer to the next dimer. This does not occur for a single large dose, where growth occurs on both the dimer and the monomer.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.