Ag and zinc oxide-doped indium oxide ohmic contacts to p-type GaN for flip-chip LED applications

Journal of Physics D: Applied Physics

Volumn 40, Issue 21, 2007, Pages 6514-6517

  Chen, Lung Chien ^a   Ho, Yao Ming ^a  

^a NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTANCE; ELECTRIC LINES; FLIP CHIP DEVICES; GALLIUM NITRIDE; HEAT TREATMENT; LIGHT EMITTING DIODES; OHMIC CONTACTS; REFLECTION; WAVELENGTH;

ALLOYING TEMPERATURES; INJECTION CURRENTS; OPTIMAL CONDITIONS;

INDIUM COMPOUNDS;

EID: 35549005491     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/21/007     Document Type: Article

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