Growth and characterization of InGaN-based light-emitting diodes on patterned sapphire substrates

Journal of Physics and Chemistry of Solids

Volumn 69, Issue 2-3, 2008, Pages 714-718

  Wang, W K ^a   Wuu, D S ^a   Lin, S H ^a   Huang, S Y ^a   Wen, K S ^a   Horng, R H ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

B. Epitaxial growth; C. Electron microscopy; C. X ray diffraction; D. Microstructure

Indexed keywords

ELECTRIC PROPERTIES; ELECTRON MICROSCOPY; EPITAXIAL GROWTH; MICROSTRUCTURE; SAPPHIRE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION;

EXTRACTION EFFICIENCY; PATTERNED SAPPHIRE SUBSTRATES (PSS);

LIGHT EMITTING DIODES;

EID: 38749120952     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2007.07.075     Document Type: Article

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