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Journal of Raman Spectroscopy

Volumn 40, Issue 4, 2009, Pages 401-404

Raman characterization before and after rapid thermal annealing of CeO 2 thin films grown by rf sputtering on (111) Si

(5) Guhel, Y a Ta, M T a Bernard, J a Boudart, B a Pesant, J C b

a Université de Caen Normandie (France)

b INSTITUT D ELECTRONIQUE (France)

Author keywords

CeO2; Raman characterization; Rapid thermal annealing; Thin films

Indexed keywords

ATMOSPHERIC TEMPERATURE; CRYSTALLINE MATERIALS; FILM GROWTH; RAPID THERMAL ANNEALING; THIN FILMS;

CEO 2; CRYSTALLINE QUALITY; DEPOSITION TEMPERATURES; R.F. SPUTTERING; RADIOFREQUENCIES; RAMAN CHARACTERIZATION; RF-SPUTTERING; SI SUBSTRATES; STRUCTURAL INVESTIGATION; THIN-FILMS;

CERIUM OXIDE;

EID: 65249102134 PISSN: 03770486 EISSN: 10974555 Source Type: Journal
DOI: 10.1002/jrs.2140 Document Type: Article

Times cited : (19)

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