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Volumn 271, Issue 1-2, 2004, Pages 176-183

Orientation selective epitaxial growth of CeO2 layers on Si(1 0 0) substrates using reactive DC magnetron sputtering with substrate bias

(4) Inoue, Tomoyasu a Ohashi, Masayuki a Sakamoto, Naomichi a Shida, Shigenari a

a IWAKI MEISEI UNIVERSITY (Japan)

Author keywords

A1. Growth models; A3. Migration enhanced epitaxy; A3. Orientation selective epitaxy; A3. Reactive sputtering; B1. Oxides; B2. Dielectric materials

Indexed keywords

CERIUM COMPOUNDS; CRYSTAL SYMMETRY; DIELECTRIC MATERIALS; MAGNETRON SPUTTERING; MOLECULAR ORIENTATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON WAFERS; SUBSTRATES; X RAY DIFFRACTION;

GROWTH MODELS; MIGRATION ENHANCED EPITAXY; ORIENTATION SELECTIVE EPITAXY; REACTIVE SPUTTERING;

EPITAXIAL GROWTH;

EID: 4944223418 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.07.052 Document Type: Article

Times cited : (25)

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