Orientational self-assembled field-effect transistors based on a single-walled carbon nanotube

Applied Physics Letters

Volumn 87, Issue 24, 2005, Pages 1-3

  Li, Xianglong ^a   Liu, Yunqi ^a   Shi, Dachuan ^a   Sun, Yanming ^a   Yu, Gui ^a   Zhu, Daoben ^a   Liu, Hongmin ^b   Liu, Xinyu ^b   Wu, Dexin ^b  

^a INSTITUTE OF CHEMISTRY   (China)

^b INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL GEOMETRY; ELECTRONIC EQUIPMENT; FABRICATION; FIELD EFFECT TRANSISTORS; SELF ASSEMBLY; SOLUTIONS;

COVALENT INTERACTION; MASS FABRICATION; THIOL GROUPS;

CARBON NANOTUBES;

EID: 28844464708     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2137464     Document Type: Article

References (24)

1. See, for example, M. S. Dresselhaus, G. Dresselhaus, and P. C. Eklund, Science of Fullerenes and Carbon Nanotubes (Academic, San Diego, CA, 1996).
2. S. J. Tans, A. R. M. Verschueren, and C. Dekker, Nature (London) 393, 49 (1998).
3. R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and Ph. Avouris, Appl. Phys. Lett. 73, 2447 (1998).
4. S. J. Wind, J. Appenzeller, R. Martel, V. Derycke, and Ph. Avouris, Appl. Phys. Lett. 80, 3817 (2002).
5. A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. Mcintyre, P. Mceuen, M. Lundstrom, and H. Dai, Nat. Mater. 1, 241 (2002).
6. T. Dürkop, S. A. Getty, E. Cobas, and M. S. Fuhrer, Nano Lett. 4, 35 (2004).
7. A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. J. Dai, Nature (London) 424, 654 (2003).
8. A. Bachtold, P. Hadley, T. Nakanishi, and C. Dekker, Science 294, 1317 (2001).
9. X. L. Liu, C. L. Lee, C. W. Zhou, and J. Han, Appl. Phys. Lett. 79, 3329 (2001).
10. J. Kong, N. Franklin, C. Zhou, M. Chapline, S. Peng, K. Cho, and H. J. Dai, Science 287, 622 (2000).
11. P. G. Collins, K. Bradley, M. Ishigami, and A. Zettl, Science 287, 1801 (2000).
12. S. Auvray, V. Derycke, M. Goffman, A. Filoramo, O. Jost, and J. Bourgoin, Nano Lett. 5, 451 (2005), and references therein.
13. M. Hazani, D. Shvarts, D. Peled, V. Sidorov, and R. Naaman, Appl. Phys. Lett. 85, 5025 (2004).
14. A. Ulman, Chem. Rev. (Washington, D.C.) 96, 1533 (1996).
15. C. Journet, W. K. Maser, P. Bernier, A. Loiseau, M. Lamyde la Chapelle, S. Lefrant, P. Deniard, R. Leek, and J. E. Fischer, Nature (London) 388, 756 (1997).
16. H. Hu, B. Zhao, M. E. Itkis, and R. C. Haddon, J. Phys. Chem. B 107, 13838 (2003).
17. S. S. Wong, A. T. Woolley, E. Joselevich, C. L. Cheung, and C. M. Lieber, J. Am. Chem. Soc. 120, 8557 (1998).
18. M. Brust, D. Walker, D. J. Bethell, R. Schiffrin, and R. Whyman, Chem. Commun. (Cambridge) 7, 801 (1994).
19. M. D. Lay, J. P. Novak, and E. S. Snow, Nano Lett. 4, 603 (2004), and references therein.
20. H. Xin and A. T. Woolley, Nano Lett. 4, 1481 (2004).
21. H. T. Soh, C. F. Quate, A. F. Morpurgo, C. M. Marcus, J. Kong, and H. J. Dai, Appl. Phys. Lett. 75, 627 (1999).
22. V. Derycke, R. Martel, J. Appenzeller, and Ph. Avouris, Appl. Phys. Lett. 80, 2773 (2002).
23. X. Cui, M. Freitag, R. Martel, L. Brus, and P. Avouris, Nano Lett. 3, 783 (2003).
24. J. E. Fischer, H. Dai, A. Thess, R. Lee, N. M. Hanjani, D. L. Dehaas, and R. E. Smalley, Phys. Rev. B 55, R4921 (1997).