Localized growth of suspended SWCNTs by means of an "all-laser" process and their direct integration into nanoelectronic devices

IEEE Transactions on Nanotechnology

Volumn 5, Issue 3, 2006, Pages 237-241

  El Khakani, My Ali ^a,b   Yi, Ji Hyun ^a   Aïssa, Brahim ^a  

^a INSTITUT NATIONAL DE LA RECHERCHE SCIENTIFIQUE   (Canada)

^b INRS EMT   (Canada)

Author keywords

"All laser" processing; Carbon nanotubes (CNTs); Field effect transistor (FET); Laser ablation; Nanodevices; Nanoelectronics; Nanotechnology

Indexed keywords

FIELD EFFECT TRANSISTORS; LASER ABLATION; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; SILICON COMPOUNDS; SUBSTRATES; TRANSPORT PROPERTIES;

ELECTRICAL TRANSPORT PROPERTIES; MOLECULAR CONDUCTION; NANODEVICES; NANOELECTRONIC DEVICES; NANOELECTRONICS; OPTIMAL GROWTH CONDITIONS; SINGLE-WALL CARBON NANOTUBES (SWCNT);

CARBON NANOTUBES;

EID: 33646747281     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2006.874043     Document Type: Conference Paper

References (25)

1. S. Ijima and T. Ichihashi, "Single-shell carbon nanotubes of 1-nm diameter," Nature, vol. 363, no. 6430, pp. 603-604, Jun. 1993.
2. R. H. Baughman, A. A. Zakhidov, and W. A. Heer, "Carbon nanotubes-the route toward applications," Science, vol. 297, pp. 787-792, Aug. 2002.
3. M. Terrones, H. Terrones, F. Banhart, J. C. Charlier, and P. M. Ajayan, "Coalescence of single-walled carbon nanotubes," Science, vol. 288, pp. 1226-1229, May 2000.
4. M. S. Dresselhaus, G. Dresselhaus, and R. Saito, "Carbon fibers based on C60 and their symmetry," Phys. Rev. B, vol. 45, no. 11, pp. 6234-6242, Mar. 1992.
5. P. Castrucci, M. Scarselli, M. De Crescenzi, M. A. El Khakani, F. Rosei, N. Braidy, and J. H. Yi, "Effect of coiling on the electronic properties along single-wall carbon nanotubes," Appl. Phys. Lett., vol. 85, no. 17, pp. 3857-3859, Oct. 2004.
6. S. J. Tans, A. R. M. Verschueren, and C. Dekker, "Room-temperature transistor based on a single carbon nanotube," Nature, vol. 393, no. 6680, pp. 49-52, May 1998.
7. T. Rueckes, K. Kim, E. Joselevich, G. Y. Tseng, C. L. Cheung, and C. M. Lieber, "Carbon nanotube-based nonvolatile random access memory for molecular computing," Science, vol. 289, pp. 94-97, Jul. 2000.
8. M. Freitag, M. Radosavljevic, Y. Zhou, A. T. Johnson, and W. F. Smith, "Controlled creation of a carbon nanotube diode by a scanned gate," Appl. Phys. Lett., vol. 79, no. 20, pp. 3326-3328, Nov. 2001.
9. S. J. Wind, J. Appenzeller, R. Martel, V. Derycke, and P. Avouris, "Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes," Appl. Phys. Lett., vol. 80, no. 20, pp. 3817-3819, May 2002.
10. T. Durkop, S. A. Getty, E. Cobas, andM. S. Fuhrer, "Extraordinary mobility in semiconducting carbon nanotubes," Nano Lett., vol. 4, no. 1, pp. 35-39, Jan. 2004.
11. J. Liu, A. G. Rinzler, H. J. Dai, J. H. Hafner, R. K. Bradley, P. J. Boul, A. Lu, T. Iverson, K. Shelimov, C. B. Huffman, F. Rodriguez-Macias, Y. S. Shon, T. R. Lee, D. T. Colbert, and R. E. Smalley, "Fullerene pipes," Science, vol. 280, pp. 1253-1256, May 1998.
12. H. Yanagi, E. Sawada, A. Manivannan, and L. A. Nagahara, "Self-orientation of short single- walled carbon nanotubes deposited on graphite," Appl. Phys. Lett., vol. 78, no. 10, pp. 1355-1357, Mar. 2001.
13. H. Dai, "Carbon nanotubes: Synthesis, integration, and properties," Acc. Chem. Res., vol. 35, no. 12, pp. 1035-1044, Dec. 2002.
14. N. R. Franklin, Q. Wang, T. W. Tombler, A. Javey, M. Shim, and H. Dai, "Integration of suspended carbon nanotube arrays into electronic devices and electromechanical systems," Appl. Phys. Lett., vol. 81, no. 5, pp. 913-915, Jul. 2002.
15. K. H. Lee, J. M. Cho, and W. Sigmund, "Control of growth orientation for carbon nanotubes," AppL Phys. Lett., vol. 82, no. 3, pp. 448-450, Jan. 2003.
16. M. A. El Khakani and J. H. Yi, "The nanostructure and electrical properties of SWNT bundle networks grown by an 'all-laser' growth process for nanoelectronic device applications," Nona-technology, vol. 15, no. 10, pp. S534-S539, Oct. 2004.
17. P. Corio, S. D. M. Brown, A. Marucci, M. A. Pimenta, K. Kneipp, G. Dresselhaus, and M. S. Dresselhaus, "Surface-enhanced resonant Raman spectroscopy of single-wall carbon nanotubes adsorbed on silver and gold surfaces," Phys. Rev. B, vol. 61, no. 19, pp. 13202-13211, May 2000.
18. A. M. Rao, E. Richter, S. Bandow, B. Chase, P. C. Eklund, K. A. Williams, S. Fang, K. R. Subbaswamy, M. Menon, A. Thess, R. E. Smalley, G. Dresselhaus, and M. S. Dresselhaus, "Diameter-selective Raman scattering from vibrational modes in carbon nanotubes," Science, vol. 275, pp. 187-191, Jan. 1997.
19. S. Bandow, S. Asaka, Y. Saito, A. M. Rao, L. Grigorian, E. Richter, and P. C. Eklund, "Effect of the growth temperature on the diameter distribution and chirality of single-wall carbon nanotubes," Phys. Rev. Lett., vol. 80, no. 17, pp. 3779-3782, Apr. 1998.
20. R. Martel, V. Derycke, C. Lavoie, J. Appenzeller, K. K. Chan, J. Tersoff, and P. Avouris, "Ambipolar electrical transport in semiconducting single-wall carbon nanotubes," Phys. Rev. Lett., vol. 87, no. 25, pp. 256805-1-4, Dec. 2001.
21. M. Radosavljevic, S. Heinze, J. Tersoff, and P. Avouris, "Drain voltage scaling in carbon nanotube transistors," Appl. Phys. Lett., vol. 83, no. 12, pp. 2435-2437, Sep. 2003.
22. J. Guo, S. Datta, and M. Lundstrom, "A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors," IEEE Trans. Electron Devices, vol. 51, no. 2, pp. 172-177, Feb. 2004.
23. F. Santerre, M. A. El Khakani, M. Chaker, and J. P. Dodelet, "Properties of TiC thin films grown by pulsed laser deposition," Appl. Surf. Scien., vol. 148, no. 1-2, pp. 24-33, Jun. 1999.
24. A. Javey, M. Shim, and H. Dai, "Electrical properties and devices of large-diameter single walled carbon nanotubes," Appl. Phys. Lett., vol. 80, no. 6, pp. 1064-1066, Feb. 2002.
25. P. Castrucci, M. Scarselli, M. D. Crescenzi, M. Diociaiuti, P. Chistolini, M. A. El Khakani, and F. Rosei, "Packing-induced electronic structure changes in bundled single wall carbon nanotubes," Appl. Phys. Lett., vol. 87, no. 10, pp. 103-106, 1-3, Sep. 2005.