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Volumn 5713, Issue , 2005, Pages 545-551

Surface passivation of (001) GaAs with self-assembled monolayers of long-chain thiols

Author keywords

GaAs; Photoluminescence; Self assembled monolayers; Surface passivation; Thiol semiconductor interface

Indexed keywords

BENDING (DEFORMATION); FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); MONOLAYERS; PASSIVATION; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTOR MATERIALS;

EID: 23744467050     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.605649     Document Type: Conference Paper
Times cited : (7)

References (22)
  • 1
    • 36448999680 scopus 로고
    • Fabrication of lateral npn-phototransistors with high gain and sub-μm spatial resolution
    • P. Baumgartner, C. Engel, G. Abstreiter, G. Böhm, G. Weimann, "Fabrication of lateral npn-phototransistors with high gain and sub-μm spatial resolution", Appl. Phys. Lett. 66(6), 751(1995)
    • (1995) Appl. Phys. Lett. , vol.66 , Issue.6 , pp. 751
    • Baumgartner, P.1    Engel, C.2    Abstreiter, G.3    Böhm, G.4    Weimann, G.5
  • 2
    • 33847141327 scopus 로고
    • Fabrication of in-plane-gate transistor structures by focused laser beam-induced Zn doping of modulation-doped GaAs/AlGaAs quantum wells
    • P. Baumgartner, C. Engel, G. Abstreiter, G. Böhm, G. Weimann, "Fabrication of in-plane-gate transistor structures by focused laser beam-induced Zn doping of modulation-doped GaAs/AlGaAs quantum wells", Appl. Phys. Lett. 64(5), 592(1994)
    • (1994) Appl. Phys. Lett. , vol.64 , Issue.5 , pp. 592
    • Baumgartner, P.1    Engel, C.2    Abstreiter, G.3    Böhm, G.4    Weimann, G.5
  • 4
    • 84955050486 scopus 로고
    • The chemistry of sulfur passivation of GaAs surfaces
    • and references therein
    • J. Shin, K.M. Geib, C.W. Wilmsen and Z. Lilliental-Weber, "The chemistry of sulfur passivation of GaAs surfaces", J. Vac. Sci. Technol. A8(3), 1894-1898 (1990), and references therein.
    • (1990) J. Vac. Sci. Technol. , vol.A8 , Issue.3 , pp. 1894-1898
    • Shin, J.1    Geib, K.M.2    Wilmsen, C.W.3    Lilliental-Weber, Z.4
  • 5
    • 84866654986 scopus 로고
    • GaAs interfaces with octadecyl thiol self-assembled monolayer - Structural and electrical-properties
    • O. S. Nakagawa, S. Ashok, S.W. Sheen, J. Martensson, D.L. Allara, "GaAs interfaces with octadecyl thiol self-assembled monolayer - structural and electrical-properties", Jap. J. Appl. Phys., Part 1, 30(12B), 3759-3762 (1991).
    • (1991) Jap. J. Appl. Phys., Part 1 , vol.30 , Issue.12 B , pp. 3759-3762
    • Nakagawa, O.S.1    Ashok, S.2    Sheen, S.W.3    Martensson, J.4    Allara, D.L.5
  • 6
    • 84930010586 scopus 로고
    • Passivation of GaAs surface recombination with organic thiols
    • S. R. Lunt, P. G. Santangelo, N. S. Lewis, "Passivation of GaAs surface recombination with organic thiols", J. Vac. Sci. Technol. B9(4), 2333-2336 (1991).
    • (1991) J. Vac. Sci. Technol. , vol.B9 , Issue.4 , pp. 2333-2336
    • Lunt, S.R.1    Santangelo, P.G.2    Lewis, N.S.3
  • 7
    • 0012708014 scopus 로고
    • Chemical studies of the passivation of GaAs surface recombination using sulfides and thiols
    • S. R. Lunt, G. N. Ryba, P. G. Santangelo and N. S. Lewis, "Chemical studies of the passivation of GaAs surface recombination using sulfides and thiols", J. Appl. Phys., 70(12), 7449-7467(1991).
    • (1991) J. Appl. Phys. , vol.70 , Issue.12 , pp. 7449-7467
    • Lunt, S.R.1    Ryba, G.N.2    Santangelo, P.G.3    Lewis, N.S.4
  • 8
    • 84996528794 scopus 로고
    • A new class of organized self-assembled monolayers: Alkane thiols on gallium arsenide(100)
    • C. W. Sheen, J. X. Shi, J. Maarensson, A. N. Parikh and D. L. Allara, "A new class of organized self-assembled monolayers: alkane thiols on gallium arsenide(100)", J. Am. Chem. Soc., 114(4), 1514-1515 (1992).
    • (1992) J. Am. Chem. Soc. , vol.114 , Issue.4 , pp. 1514-1515
    • Sheen, C.W.1    Shi, J.X.2    Maarensson, J.3    Parikh, A.N.4    Allara, D.L.5
  • 10
    • 0029252374 scopus 로고
    • AFM observation of self-assembled monolayer films on GaAs (110)
    • H. Ohno, M. Motomatsu, W. Mizutani and H. Tokumoto, "AFM Observation of Self-Assembled Monolayer Films on GaAs (110)", Jpn. J. Appl. Phys. Part I, 34(2B), 1381-1386 (1995).
    • (1995) Jpn. J. Appl. Phys. Part I , vol.34 , Issue.2 B , pp. 1381-1386
    • Ohno, H.1    Motomatsu, M.2    Mizutani, W.3    Tokumoto, H.4
  • 11
    • 36449001783 scopus 로고
    • Near-surface electronic structure in GaAs (100) modified with self-assembled monolayers of octadecylthiol
    • J. F. Dorsten, J. E. Maslar and P. W. Bohn, "Near-surface electronic structure in GaAs (100) modified with self-assembled monolayers of octadecylthiol", Appl. Phys. Lett., 66(14), 1755-1757 (1995).
    • (1995) Appl. Phys. Lett. , vol.66 , Issue.14 , pp. 1755-1757
    • Dorsten, J.F.1    Maslar, J.E.2    Bohn, P.W.3
  • 12
    • 0031653137 scopus 로고    scopus 로고
    • Electronic properties of GaAs(100) surface passivated in alcoholic sulfide solutions
    • V. N. Bessolov, M. V. Lebedev, A. F. Ivankov, W. Bauhofer and D. R. T. Zahn, "Electronic properties of GaAs(100) surface passivated in alcoholic sulfide solutions", Appl. Surf. Sci., 133(1), 17-22 (1998).
    • (1998) Appl. Surf. Sci. , vol.133 , Issue.1 , pp. 17-22
    • Bessolov, V.N.1    Lebedev, M.V.2    Ivankov, A.F.3    Bauhofer, W.4    Zahn, D.R.T.5
  • 13
    • 0000021156 scopus 로고    scopus 로고
    • Formation of self-assembled monolayers of alkanethiols on GaAs surface with in-situ surface activation by ammonium hydroxide
    • T. Baum, S. Ye and K. Uosaki, "Formation of self-assembled monolayers of alkanethiols on GaAs surface with in-situ surface activation by ammonium hydroxide", Langmuir, 15(25), 8577-8579 (1999).
    • (1999) Langmuir , vol.15 , Issue.25 , pp. 8577-8579
    • Baum, T.1    Ye, S.2    Uosaki, K.3
  • 14
    • 0032663861 scopus 로고    scopus 로고
    • Preparation of self-asembled mercaptoalkanoic aid mltilayers on GaAs (110) srfaces
    • H. Ohno, L. A. Naghara, W. Mizutani, J. Takagi and H. Tokumoto, "Preparation of self-asembled mercaptoalkanoic aid mltilayers on GaAs (110) srfaces", Jpn, J. Appl. Phys., Part I, 38(1A), 180-185 (1999).
    • (1999) Jpn, J. Appl. Phys., Part I , vol.38 , Issue.1 A , pp. 180-185
    • Ohno, H.1    Naghara, L.A.2    Mizutani, W.3    Takagi, J.4    Tokumoto, H.5
  • 15
    • 2342458351 scopus 로고    scopus 로고
    • Synchrotron photoemission spectroscopy study of ammonium hydroxide etching to prepare well-ordered GaAs(100) surfaces
    • M. V. Lebedev, D. Ensling, R. Hunger, T. Mayer and W. Jaegermann, "Synchrotron photoemission spectroscopy study of ammonium hydroxide etching to prepare well-ordered GaAs(100) surfaces", Appl. Surf. Sci, 229(1-4), 226-232 (2004).
    • (2004) Appl. Surf. Sci , vol.229 , Issue.1-4 , pp. 226-232
    • Lebedev, M.V.1    Ensling, D.2    Hunger, R.3    Mayer, T.4    Jaegermann, W.5
  • 17
    • 0000685811 scopus 로고    scopus 로고
    • Passivation of GaAs (100) with an adhesion promoting self-assembled monolayer
    • T. Hou, C. M. Greenlief, S. W. Keller, L. Nelen and J. F. Kauffman, "Passivation of GaAs (100) with an Adhesion Promoting Self-Assembled Monolayer", Chem. Mater., 9(12), 3181-3186 (1997).
    • (1997) Chem. Mater. , vol.9 , Issue.12 , pp. 3181-3186
    • Hou, T.1    Greenlief, C.M.2    Keller, S.W.3    Nelen, L.4    Kauffman, J.F.5
  • 18
    • 0035481093 scopus 로고    scopus 로고
    • Surface passivation of (100) InP by organic thiols and polyimide as characterized by steady-state photoluminescence
    • M. Schvartzman, V. Sidorov, D. Ritter and Y. Paz, "Surface passivation of (100) InP by organic thiols and polyimide as characterized by steady-state photoluminescence", Semicond. Sci. Technol., 16(10), L68-L71 (2001).
    • (2001) Semicond. Sci. Technol. , vol.16 , Issue.10
    • Schvartzman, M.1    Sidorov, V.2    Ritter, D.3    Paz, Y.4
  • 19
    • 0037233379 scopus 로고    scopus 로고
    • Passivation of InP surfaces of electronic devices by organothiolated self-assembled monolayers
    • M. Schvartzman, V. Sidorov, D. Ritter and Y. Paz, "Passivation of InP surfaces of electronic devices by organothiolated self-assembled monolayers", J. Vac. Sci. Technol. B21(1), 148-155 (2003).
    • (2003) J. Vac. Sci. Technol. , vol.B21 , Issue.1 , pp. 148-155
    • Schvartzman, M.1    Sidorov, V.2    Ritter, D.3    Paz, Y.4
  • 22
    • 33644573688 scopus 로고    scopus 로고
    • X. Ding et al., to be published
    • X. Ding et al., to be published.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.