GaAs surface cleaning by low energy hydrogen ion beam treatment

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 20, Issue 4, 2002, Pages 1492-1497

  Razek, N ^a   Otte, K ^a   Chasse T ^a   Hirsch, D ^a   Schindler, A ^a   Frost, F ^a   Rauschenbach, B ^a  

^a LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL BONDS; CLEANING; COMPOSITION; HYDROGEN; ION IMPLANTATION; SURFACE ROUGHNESS; TEMPERATURE; X RAY PHOTOELECTRON SPECTROSCOPY;

LOW ENERGY HYDROGEN ION BEAM TREATMENT; SURFACE CONTAMINATION; WAFER DIRECT BONDING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036649760     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1488949     Document Type: Article

References (26)