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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 7, 2001, Pages 4454-4457

The effective control of Pd/GaAs interface by sulfidation and thermal hydrogenation

(2) Kang, M G a Park, H H a

a Yonsei University (South Korea)

Author keywords

GaAs; Hydrogenation; Interfacial property; Sohottky contact; Sulfidation

Indexed keywords

ANNEALING; HYDROGENATION; LEAKAGE CURRENTS; METALLIZING; PALLADIUM; PASSIVATION; SCHOTTKY BARRIER DIODES; SUBLIMATION; X RAY PHOTOELECTRON SPECTROSCOPY;

THERMAL HYDROGENATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035388497 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.4454 Document Type: Article

Times cited : (3)

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