In situ ellipsometric monitoring of GaAs surface modifications during plasma processing: Chemistry and kinetics

Thin Solid Films

Volumn 313-314, Issue , 1998, Pages 501-505

  Losurdo, M ^a   Capezzuto, P ^a   Bruno, G ^a  

^a UNIVERSITY OF BARI   (Italy)

Author keywords

Ellipsometry; III V semiconductors; Plasma processing

Indexed keywords

ELLIPSOMETRY; HYDROGEN; MORPHOLOGY; NITRIDING; NITROGEN; OXIDATION; OXYGEN; PLASMA APPLICATIONS; REACTION KINETICS; SURFACE TREATMENT;

SPECTROSCOPIC ELLIPSOMETRY (SE);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032002138     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00872-9     Document Type: Article

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