Characteristics of deposited Eu2O3 film as a thick gate dielectric for silicon

EPJ Applied Physics

Volumn 28, Issue 1, 2004, Pages 59-64

  Dakhel, A A ^a  

^a UNIVERSITY OF BAHRAIN   (Bahrain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; ELECTRIC POTENTIAL; ELLIPSOMETRY; EUROPIUM COMPOUNDS; MOS DEVICES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; THERMODYNAMICS; X RAY DIFFRACTION ANALYSIS;

AC CONDUCTION; METAL-INSULATOR-SEMICONDUCTOR STRUCTURES; RARE-EARTH METAL OXIDES (REO); X-RAY EMISSION SPECTRA;

THIN FILMS;

EID: 6444226675     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2004171     Document Type: Article

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