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Materials Science and Engineering C

Volumn 21, Issue 1-2, 2002, Pages 307-312

Influence of Ru3+ ions at Al2O3/GaAs interface on MIS structures

(4) Mazari, H a Benamara, Z a Bonnaud, O b Olier, R c

a UNIVERSITY OF SIDI BEL ABBES (Algeria)

b Campus de Beaulieu (France)

c CNRS (France)

Author keywords

Al2O3 GaAs interface; MIS structures; Ruthenium; Selenide

Indexed keywords

ALUMINUM; INTERFACES (MATERIALS); MONOLAYERS; OPTICAL PROPERTIES; PHOTOELECTRIC CELLS; RADIOACTIVE TRACERS; RUTHENIUM; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTRONIC TRANSFER KINETICS;

MATERIALS SCIENCE;

SELENIDE;

EID: 0036737220 PISSN: 09284931 EISSN: None Source Type: Journal
DOI: 10.1016/S0928-4931(02)00090-5 Document Type: Article

Times cited : (2)

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