A MOS structure temperature characterization

Materials Science and Engineering B

Volumn 48, Issue 3, 1997, Pages 234-238

  Bouzidi, A ^a   Boudissa, A ^a   Benamara, Z ^a   Anani, M ^a   Sehil, H ^a   Akkal, B ^a  

^a UNIVERSITY OF SIDI BEL ABBES   (Algeria)

Author keywords

Aluminum; Band gap; Density of surface states; Metal oxide silicon capacitor

Indexed keywords

ALUMINUM; CAPACITANCE; CAPACITORS; CHARACTERIZATION; CRYSTAL DEFECTS; ELECTRIC PROPERTIES; ELECTRONIC DENSITY OF STATES; ENERGY GAP; INTERFACES (MATERIALS); MOS DEVICES; THERMAL EFFECTS;

METAL OXIDE SILICON CAPACITOR; OXIDE SEMICONDUCTOR INTERFACE;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0031212769     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00019-6     Document Type: Article

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