Electron irradiation effects in GaNInGaN Multiple quantum well structures

Journal of the Electrochemical Society

Volumn 155, Issue 1, 2008, Pages

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Lee, In Hwan ^b   Baek, Jong Hyeob ^c   Kolin, N G ^d   Boiko, V M ^a   Merkurisov, D I ^d   Pearton, S J ^e,f  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b Chonbuk National University   (South Korea)

^c Korea Photonics Technology Institute (KOPTI)   (South Korea)

^d Federal State Unitary Enterprise   (Russian Federation)

^e UNIVERSITY OF FLORIDA   (United States)

^f ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR TRAPS; CAPACITANCE-VOLTAGE PROFILES; QUANTUM WELL STRUCTURES;

CAPACITANCE MEASUREMENT; ELECTRON IRRADIATION; ELECTRON TRAPS; IONIZATION POTENTIAL; LIGHT EMITTING DIODES; SEMICONDUCTING GALLIUM COMPOUNDS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 36448954718     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2803517     Document Type: Article

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