Recent advances in hot-wire CVD R&D at NREL: From 18% silicon heterojunction cells to silicon epitaxy at glass-compatible temperatures

Thin Solid Films

Volumn 516, Issue 5, 2008, Pages 743-746

  Branz, Howard M ^a   Teplin, Charles W ^a   Young, David L ^a   Page, Matthew R ^a   Iwaniczko, Eugene ^a   Roybal, Lorenzo ^a   Bauer, Russell ^a   Mahan, A Harv ^a   Xu, Yueqin ^a   Stradins, Pauls ^a   Wang, Tihu ^a   Wang, Qi ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

Crystallization; Efficiency; Epitaxial growth; Heterojunctions; Hot wire deposition; Passivation; Silicon; Solar cells

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; EPITAXIAL GROWTH; GLASS; PHOTOVOLTAIC CELLS; SILICON; SILICON WAFERS; SOLAR CELLS;

GLASS COMPATIBLE TEMPERATURES; HETEROJUNCTION CELLS; HOT WIRE DEPOSITION; PHOTOVOLTAIC MATERIALS;

HETEROJUNCTIONS;

EID: 36749056260     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.06.115     Document Type: Article

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