Modification of para-sexiphenyl layer growth by UV induced polarity changes of polymeric substrates

Organic Electronics

Volumn 10, Issue 2, 2009, Pages 326-332

  Hernandez Sosa, G ^a   Simbrunner, C ^a   Hofler T ^b   Moser, A ^c   Werzer, O ^c   Kunert, B ^c   Trimmel, G ^b   Kern, W ^d   Resel, R ^c   Sitter, H ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

^c GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

^d UNIVERSITY OF LEOBEN   (Austria)

Author keywords

Hot wall epitaxy; Para sexiphenyl; Photo Fries rearrangement; Photochemistry; Surface polarity

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ATOMIC STRUCTURE; CRYSTAL SYMMETRY; EPITAXIAL GROWTH; PHOTOCHEMICAL REACTIONS; X RAY DIFFRACTION;

CRYSTALLOGRAPHIC ORDERING; FRIES REARRANGEMENT; GRAZING INCIDENCE X-RAY DIFFRACTION; HIGH SUBSTRATE TEMPERATURE; HOT-WALL EPITAXY; LOW SUBSTRATE TEMPERATURE; PARA-SEXIPHENYL; SURFACE POLARITIES;

SUBSTRATES;

EID: 64149129609     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2008.12.005     Document Type: Article

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