Multiple digital breakdowns and its consequence on ultrathin gate dielectrics reliability prediction

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 497-500

  Lo, V L ^a   Pey, K L ^a   Tung, C H ^b   Li, X ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

GATE-LEAKAGE CURRENTS; NOISE MEASUREMENTS; ULTRA-THIN GATE DIELECTRICS;

ELECTRON DEVICES; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOS CAPACITORS;

GATE DIELECTRICS;

EID: 50249122653     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418983     Document Type: Conference Paper

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