A new insight into the dynamic fluctuation mechanism of stress-induced leakage current

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 604-609

  Ishida, T ^a   Tega, N ^a   Mori, Y ^a   Miki, H ^a   Mine, T ^a   Kume, H ^a   Torii, K ^a   Muraguchi, M ^b   Takada, Y ^b   Shiraishi, K ^b   Yamada, R ^a  

^a HITACHI LTD   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Dynamic fluctuation; Random telegraph noise; RTN; SILC; Stress induced leakage current

Indexed keywords

RELIABILITY;

DYNAMIC FLUCTUATION; RANDOM TELEGRAPH NOISE; RTN; SILC; STRESS-INDUCED LEAKAGE CURRENT;

FLASH MEMORY;

EID: 51549094797     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558953     Document Type: Conference Paper

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