Percolation resistance evolution during progressive breakdown in narrow MOSFETs

IEEE Electron Device Letters

Volumn 27, Issue 5, 2006, Pages 396-398

  Lo, V L ^a   Pey, K L ^a   Tung, C H ^b   Ang, D S ^a   Foo, T S ^a   Tang, L J ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Dielectric breakdown; MOSFET; Percolation model; Percolation resistance; Progressive breakdown

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); MOSFET DEVICES; SEMICONDUCTOR DEVICE MODELS; TEMPERATURE MEASUREMENT; VOLTAGE MEASUREMENT;

DIELECTRIC BREAKDOWN; PARASITIC RESISTANCE; PERCOLATION RESISTANCE; PROGRESSIVE BREAKDOWN; ULTRATHIN GATE DIELECTRIC;

ELECTRIC RESISTANCE MEASUREMENT;

EID: 33646229530     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.873422     Document Type: Article

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