Defect-related light emission in the 1.4-1.7 μm range from Si layers at room temperature

Journal of Applied Physics

Volumn 105, Issue 6, 2009, Pages

  Shklyaev, A A ^a,b,c,d   Nakamura, Y ^a,b   Dultsev, F N ^c   Ichikawa, M ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^d NOVOSIBIRSK STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-BENDING; CARRIER DENSITIES; DEFECT STATE; DENSE ARRAYS; GE ISLANDS; HIGH DENSITIES; LIGHT EMISSION INTENSITIES; LOW TEMPERATURES; NANO-STRUCTURED SURFACES; ROOM TEMPERATURES; SI LAYERS; SI SUBSTRATES; SPATIAL DISTRIBUTIONS; THERMAL EMISSION OF CARRIERS;

DEFECT DENSITY; DEFECTS; GERMANIUM; LIGHT EMISSION; SILICON; SIZE DISTRIBUTION; SURFACE DEFECTS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 63749102123     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3095670     Document Type: Article

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