Influence of growth and annealing conditions on photoluminescence of Ge/Si layers grown on oxidized Si surfaces

Journal of Physics Condensed Matter

Volumn 19, Issue 13, 2007, Pages

  Shklyaev, A A ^a,b,d   Cho, S P ^b,c   Nakamura, Y ^a,b   Tanaka, N ^b,c   Ichikawa, M ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NAGOYA UNIVERSITY   (Japan)

^d INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; GROWTH RATE; HIGH TEMPERATURE EFFECTS; OXIDATION; PHOTOLUMINESCENCE; SILICON; SURFACE PHENOMENA; TRANSMISSION ELECTRON MICROSCOPY;

THREE DIMENSIONAL ISLANDS;

GERMANIUM;

EID: 33947580777     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/19/13/136004     Document Type: Article

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